Electronic structure and transport properties of sol-gel-derived high-entropy Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3 thin films
نویسندگان
چکیده
High-entropy perovskite thin films, as the prototypical representative of high-entropy oxides with novel electrical and magnetic features, have recently attracted great attention. Here, we reported electronic structure charge transport properties sol-gel-derived Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3 films annealed at various temperatures. By means X-ray photoelectron spectroscopy absorption spectrum, it is found that conduction-band-minimum shifts downward valence-band-maximum upward increase annealing temperature, leading to narrowed band gap. Electrical resistance measurements confirmed a semiconductor-like behavior for all films. Two mechanisms, i.e., thermally-activated mechanism high temperatures activation-less low temperatures, are identified by self-consistent analysis method. These findings provide critical insight into Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3, validating compelling oxide material future electronic/energy-related technologies.
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ژورنال
عنوان ژورنال: Ceramics International
سال: 2021
ISSN: ['0272-8842', '1873-3956']
DOI: https://doi.org/10.1016/j.ceramint.2021.04.026